South Bay Technology Ion Beam Sputtering / Etching System
Description: South Bay Ion Beam Sputtering / Etching System is a high vacuum system that can be used to deposit thin conductive metal films onto samples. This sputtering procedure will prevent charging effects and enhance contrast while imaging in an electron microscope. The instrument has three ion beam sources and multiple exchangeable targets. Two of the ion beam sources are directed at the target material to produce a thin conductive film. Ion beam etching techniques can be done by directing the third ion beam straight at the samples. The stage’s rotation and tilting control allow for spatial coating up to 90 degrees. The deposition time, stage tilt, and rotation speed are adjustable. Usage of this instrument is only available through staff assisted usage, which can be requested by emailing eicnhelp@cnsi.ucla.edu.
Key features:
- Targets available: Iridium, Nickel, Indium(III) Oxide In2O3
- Max vacuum: 10-7 torr
- Vacuum at deposition: 10-5 torr
- Ionizing gas: Argon
- Stage: Can be tilted and rotated up to 90°. Holds up to 6 ZEISS ½” stubs.
- Deposition rate: ~11 angstroms per minute for Iridium (0 degree tilt, two guns (3ma + 3ma), at 8 kV)
- Ion beam etching available
